Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17000355Application Date: 2020-08-23
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Publication No.: US11676960B2Publication Date: 2023-06-13
- Inventor: Yuichi Onozawa , Kota Ohi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP 2016026403 2016.02.15
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L29/66 ; H01L29/732 ; H01L29/861 ; H01L21/265 ; H01L21/8249 ; H01L27/06 ; H01L27/07 ; H01L21/266
Abstract:
A semiconductor device is provided that has a semiconductor substrate, a drift layer of a first conductivity type formed in the semiconductor substrate, a base region of a second conductivity type formed in the semiconductor substrate and above the drift layer, and an accumulation region of the first conductivity type provided between the drift layer and the base region and having an impurity concentration higher than an impurity concentration in the drift layer, wherein the accumulation region has a first accumulation region and a second accumulation region that is formed more shallowly than the first accumulation region is and on a side of a boundary with a region that is different from the accumulation region in a planar view.
Information query
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