Invention Grant
- Patent Title: Electronic device including ferroelectric layer
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Application No.: US17513050Application Date: 2021-10-28
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Publication No.: US11677025B2Publication Date: 2023-06-13
- Inventor: Yunseong Lee , Jinseong Heo , Sangwook Kim , Sanghyun Jo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20180154694 2018.12.04
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L29/423 ; H01L21/02 ; H01L29/66 ; H01L29/08 ; H01L21/28 ; H10B51/30 ; H01L27/1159
Abstract:
An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.
Information query
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