Invention Grant
- Patent Title: Control circuit for bridge MOSFETs
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Application No.: US17511422Application Date: 2021-10-26
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Publication No.: US11677314B2Publication Date: 2023-06-13
- Inventor: Gary Lin , Chung-Ping Ku , Nowa Wang
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Spring
- Agency: Nolte Lackenbach Siegel
- Main IPC: H02M7/219
- IPC: H02M7/219 ; H02M1/42 ; H02M3/158

Abstract:
A control circuit for a plurality of metal-oxide semiconductor field-effect transistors (MOSFETs) in a bridge circuit for rectifying an alternating current (AC) input to generate a direct-current (DC) output includes first and second high side controls and first and second low side controls for providing gate voltage signals to respective MOSFETs in the bridge circuit. Dead time controls are provided for establishing dead time intervals between activation of complementary MOSFETs in the bridge circuit. The low side controls provide gate voltage signals having sloped edges and the dead time controls include Zener diodes having reverse bias thresholds for determining the duration of the dead time intervals.
Public/Granted literature
- US20230127621A1 CONTROL CIRCUIT FOR BRIDGE MOSFETS Public/Granted day:2023-04-27
Information query
IPC分类: