Invention Grant
- Patent Title: RF amplifier apparatus
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Application No.: US17143160Application Date: 2021-01-07
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Publication No.: US11677361B2Publication Date: 2023-06-13
- Inventor: Chih-Sheng Chen , Ching Wen Hsu
- Applicant: RichWave Technology Corp.
- Applicant Address: TW Taipei
- Assignee: RichWave Technology Corp.
- Current Assignee: RichWave Technology Corp.
- Current Assignee Address: TW Taipei
- Agency: JCIPRNET
- Priority: TW 9138285 2020.11.03
- Main IPC: H03F3/19
- IPC: H03F3/19 ; H04B1/40

Abstract:
The invention provides a radio frequency (RF) amplifier apparatus including an amplifier and a resonance circuit. An input terminal of the amplifier receives an RF signal. The amplifier amplifies a first frequency component of the RF signal and outputs the amplified first frequency component to an output terminal of the amplifier. A first terminal and a second terminal of the resonance circuit are respectively coupled to the input terminal and the output terminal of the amplifier. The resonance circuit provides a low impedance path for a second frequency component of the RF signal between the input terminal and the output terminal of the amplifier, and provides a high impedance path for the first frequency component of the RF signal between the input terminal and the output terminal of the amplifier.
Public/Granted literature
- US20220140793A1 RF AMPLIFIER APPARATUS Public/Granted day:2022-05-05
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