Invention Grant
- Patent Title: Hall device
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Application No.: US16948739Application Date: 2020-09-30
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Publication No.: US11678588B2Publication Date: 2023-06-13
- Inventor: Udo Ausserlechner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Priority: DE 2019127413.3 2019.10.11
- Main IPC: H10N52/00
- IPC: H10N52/00 ; H03K17/90 ; H10N52/80 ; G01R33/07 ; G01R33/00 ; H01L43/06 ; H01L43/04

Abstract:
A Hall effect device includes a semiconductor region and at least three contacts to the semiconductor region, which are arranged in the semiconductor region substantially along a line or curve. The line or curve functionally separates the semiconductor region in a first region and a second region. The Hall effect device further including a first electrode that is electrically isolated against the first region and a second electrode that is electrically isolated against the second region. Two of the at least three contacts supply electric energy to the first region and to the second region, and the remaining at least one contact taps an output signal of the first region and/or the second region that responds to a magnetic field component.
Public/Granted literature
- US20210111336A1 HALL DEVICE Public/Granted day:2021-04-15
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