Invention Grant
- Patent Title: Hierarchical density uniformization for semiconductor feature surface planarization
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Application No.: US17531507Application Date: 2021-11-19
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Publication No.: US11681851B2Publication Date: 2023-06-20
- Inventor: Venkata Sripathi Sasanka Pratapa , Jyun-Hong Chen , Wen-Hao Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group
- Main IPC: G06F30/30
- IPC: G06F30/30 ; H01L23/00 ; G06F30/398 ; G06F30/392 ; G06F111/10 ; G06F113/18

Abstract:
The current disclosure describes techniques for managing planarization of features formed on a semiconductor wafer. The disclosed techniques achieve relative planarization of micro bump structures formed on a wafer surface by adjusting the pattern density of the micro bumps formed within various regions on the wafer surface. The surface area size of a micro bump formed within a given wafer surface region may be enlarged or reduced to change the pattern density. A dummy micro bump may be inserted into a given wafer surface region to increase the pattern density.
Public/Granted literature
- US20220075924A1 HIERARCHICAL DENSITY UNIFORMIZATION FOR SEMICONDUCTOR FEATURE SURFACE PLANARIZATION Public/Granted day:2022-03-10
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