Invention Grant
- Patent Title: Low power scheme for power down in integrated dual rail SRAMs
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Application No.: US17549962Application Date: 2021-12-14
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Publication No.: US11682434B2Publication Date: 2023-06-20
- Inventor: Sanjeev Kumar Jain
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/417

Abstract:
Systems and methods are provided for controlling power down of an integrated dual rail memory circuit. The power down system is configured to power down the power rail for input and logic components (VDD) while maintaining power to the power rail for the memory cells (VDDM). The power down system includes two voltage rails, a clock generator, and a power detector for detecting the power on VDD. The power detector generates an isolated power signal when voltage on VDD is below a voltage threshold. The isolated power signal is configured to disable the clock generator and thus reduce dynamic power as the read/write cycle is not triggered during power down.
Public/Granted literature
- US20220319557A1 Low Power Scheme for Power Down in Integrated Dual Rail SRAMs Public/Granted day:2022-10-06
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