Invention Grant
- Patent Title: Charge loss compensation
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Application No.: US17390142Application Date: 2021-07-30
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Publication No.: US11682462B2Publication Date: 2023-06-20
- Inventor: Kalyan Chakravarthy C. Kavalipurapu , Jung Sheng Hoei
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/34 ; G11C11/56

Abstract:
Disclosed in some examples are methods, systems, devices, and machine-readable mediums for compensating for charge loss effects. In some examples, a charge loss may be estimated by a charge loss monitor for a particular unit of a NAND device and may be utilized to select a charge loss compensation scheme. The charge loss may be estimated by the charge loss estimation process by determining a reference read voltage and calculating a bit count resulting from a read at that reference read voltage. The number of bits returned may be used to select the particular charge loss compensation scheme.
Public/Granted literature
- US20210358556A1 CHARGE LOSS COMPENSATION Public/Granted day:2021-11-18
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