Invention Grant
- Patent Title: Through-vias and methods of forming the same
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Application No.: US16215792Application Date: 2018-12-11
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Publication No.: US11682583B2Publication Date: 2023-06-20
- Inventor: Chung-Hao Tsai , En-Hsiang Yeh , Chuei-Tang Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- The original application number of the division: US13762248 2013.02.07
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48
Abstract:
An integrated circuit structure includes a substrate, a metal ring penetrating through the substrate, a dielectric region encircled by the metal ring, and a through-via penetrating through the dielectric region. The dielectric region is in contact with the through-via and the metal ring.
Public/Granted literature
- US20190115258A1 Through-Vias and Methods of Forming the Same Public/Granted day:2019-04-18
Information query
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