Invention Grant
- Patent Title: Power semiconductor module
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Application No.: US17064521Application Date: 2020-10-06
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Publication No.: US11682596B2Publication Date: 2023-06-20
- Inventor: Yuichiro Hinata , Ryotaro Tsuruoka
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JP 19209019 2019.11.19
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/057 ; H01R13/40 ; H01R12/58 ; H05K5/00 ; H01L23/31 ; H05K1/18 ; H01L23/12

Abstract:
A power semiconductor module includes an insulating circuit substrate; a printed circuit board disposed over the insulating circuit substrate; and a plurality of terminals each having a rod-shaped portion and including a first protrusion and a second protrusion each protruding laterally form a side face of the rod-shaped portion; wherein at least one of the plurality of terminals is inserted to one of the through-holes of the printed circuit board and is locked to the one of the through-holes via the first protrusion, and wherein at least another one of the plurality of terminals is inserted to another one of the through-holes of the printed circuit board and is locked to said another one of the through-holes via the second protrusion, and an end of the at least another one of the plurality of terminals is electrically connected to a conductive plate on the insulating circuit substrate.
Public/Granted literature
- US20210151356A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2021-05-20
Information query
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