Invention Grant
- Patent Title: Active matrix substrate and method for manufacturing same
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Application No.: US17070716Application Date: 2020-10-14
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Publication No.: US11682681B2Publication Date: 2023-06-20
- Inventor: Hidenobu Kimoto
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: ScienBiziP, P.C.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786

Abstract:
A method for manufacturing an active matrix substrate includes: (A) a step of forming a laminated film including a lower conductive film, a lower insulating film, and a semiconductor film in this order on a substrate; (B) a step of forming a first resist layer; (C) a step of performing a patterning on the laminated film, the step including, in the first formation region, forming the first substructure including a first lower conductive layer, a first lower insulating layer, and a first semiconductor layer respectively formed from the lower conductive film, the lower insulating film, and the semiconductor film, and (D) a step of forming source and drain electrodes electrically connected to the first semiconductor layer.
Public/Granted literature
- US20210118910A1 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2021-04-22
Information query
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