A semiconductor memory structure and method of manufacturing a semiconductor memory structure are provided. The semiconductor memory structure includes alternatively arranged stacking portions and cell regions. Each cell region includes two ferroelectric layers formed along the adjacent stacking portions; and at least one central portion disposed between the ferroelectric layers and including a first conductive structure and a second conductive structure separated by a channel isolation structure as well as two semiconductor layers formed along the ferroelectric layers. The first conductive structure includes a contact portion and an extension portion. The contact portion is disposed between the semiconductor layers. The extension portion extends from the contact portion to the channel isolation structure and is separated from the semiconductor layers through dielectric layers.