Invention Grant
- Patent Title: Method of using polishing pad
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Application No.: US16952901Application Date: 2020-11-19
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Publication No.: US11691243B2Publication Date: 2023-07-04
- Inventor: ChunHung Chen , Jung-Yu Li , Sheng-Chen Wang , Shih-Sian Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US15647444 2017.07.12
- Main IPC: B24B37/24
- IPC: B24B37/24 ; B24B37/26 ; B24B37/22 ; B24B37/10 ; B24B37/005 ; B24B53/017 ; B24B49/12

Abstract:
A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.
Public/Granted literature
- US20210069855A1 METHOD OF USING POLISHING PAD Public/Granted day:2021-03-11
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