Invention Grant
- Patent Title: Copper powder and method for producing same
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Application No.: US16473353Application Date: 2017-12-21
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Publication No.: US11692241B2Publication Date: 2023-07-04
- Inventor: Masahiro Yoshida , Kenichi Inoue , Atsushi Ebara , Yoshiyuki Michiaki , Takahiro Yamada
- Applicant: Dowa Electronics Materials Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
- Current Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Bachman & LaPointe, P.C.
- Priority: JP 16255186 2016.12.28 JP 17242314 2017.12.19
- International Application: PCT/JP2017/045934 2017.12.21
- International Announcement: WO2018/123809A 2018.07.05
- Date entered country: 2019-06-25
- Main IPC: H01B1/22
- IPC: H01B1/22 ; B22F1/10 ; B22F9/08

Abstract:
While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.
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