Invention Grant
- Patent Title: Plasma induced modification of silicon carbide surface
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Application No.: US17139211Application Date: 2020-12-31
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Publication No.: US11692267B2Publication Date: 2023-07-04
- Inventor: Francis Kanyiri Mungai , Vijayabhaskara Venkatagiriyappa , Yung-Cheng Hsu , Keiichi Tanaka , Mario D. Silvetti , Mihaela A. Balseanu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/32
- IPC: C23C16/32 ; C23C16/455 ; H01L21/687 ; C23C16/458
Abstract:
Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.
Public/Granted literature
- US20220205095A1 PLASMA INDUCED MODIFICATION OF SILICON CARBIDE SURFACE Public/Granted day:2022-06-30
Information query
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