Invention Grant
- Patent Title: Integrated circuit and method of manufacturing same
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Application No.: US17860985Application Date: 2022-07-08
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Publication No.: US11694013B2Publication Date: 2023-07-04
- Inventor: Ting-Wei Chiang , Hui-Zhong Zhuang , Li-Chun Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/392
- IPC: G06F30/392 ; H01L27/02 ; H01L27/092

Abstract:
An integrated circuit includes a first and a set of conductive traces, and a first conductive feature. The second set of conductive traces includes a first conductive trace of the second set of conductive traces corresponding to a gate terminal of a first p-type transistor, and a second conductive trace of the second set of conductive traces corresponding to a gate terminal of a first n-type transistor. The first conductive feature corresponds to at least a first contact of a first dummy transistor. The first conductive trace of the second set of conductive traces is electrically coupled to the second conductive trace of the second set of conductive traces by at least the first conductive feature. The first n-type transistor being part of a first transmission gate. The first p-type transistor being part of a second transmission gate.
Public/Granted literature
- US20220343051A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME Public/Granted day:2022-10-27
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