Invention Grant
- Patent Title: BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
-
Application No.: US17100199Application Date: 2020-11-20
-
Publication No.: US11694713B2Publication Date: 2023-07-04
- Inventor: Quang Le , Cherngye Hwang , Brian R. York , Thao A. Nguyen , Zheng Gao , Kuok San Ho , Pham Nam Hai
- Applicant: Western Digital Technologies, Inc. , Tokyo Institute of Technology
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson + Sheridan, LLP
- Agent Steven H. VerSteeg
- Main IPC: G11B5/11
- IPC: G11B5/11 ; H01F10/32 ; G11B5/147 ; H10N50/85 ; H10N52/80 ; H10B61/00 ; H10N52/00 ; G11B5/00
Abstract:
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
Public/Granted literature
- US20210249038A1 BiSb Topological Insulator with Novel Buffer Layer that Promotes a BiSb (012) Orientation Public/Granted day:2021-08-12
Information query
IPC分类:
