Invention Grant
- Patent Title: Memory device, method of operating the memory device, memory module, and method of operating the memory module
-
Application No.: US17541679Application Date: 2021-12-03
-
Publication No.: US11694730B2Publication Date: 2023-07-04
- Inventor: Sunyoung Lim , Jaegon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR 20200009397 2020.01.23
- The original application number of the division: US16821615 2020.03.17
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F9/30 ; G11C7/22

Abstract:
A method is for operating a nonvolatile dual in-line memory module (NVDIMM). The NVDIMM includes a dynamic random access memory (DRAM) and a nonvolatile memory (NVM) device, the DRAM including a first input/output (I/O) port and a second I/O port, and the second I/O port connected to the NVM device. The method includes receiving an externally supplied command signal denoting a read/write command and a transfer mode, driving a multiplexer to select at least one of the first and second I/O ports according to the transfer mode of the command signal, and reading or writing data according to the read/write command of the command signal in at least one of the DRAM and NVM device using the at least one of the first and second I/O ports selected by driving the multiplexer.
Public/Granted literature
Information query