Invention Grant
- Patent Title: Internal voltage generation circuit and semiconductor memory apparatus including the same
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Application No.: US17411699Application Date: 2021-08-25
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Publication No.: US11694741B2Publication Date: 2023-07-04
- Inventor: Chan Hui Jeong
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR 20210046990 2021.04.12
- Main IPC: G11C11/4072
- IPC: G11C11/4072 ; G11C11/4099 ; G11C11/4076 ; G11C11/4074

Abstract:
An internal voltage generation circuit includes an enable control circuit configured to generate a final enable signal by limiting an activation time point of an enable signal to a point in time after a reset time, after the enable signal is inactivated. The internal voltage generation circuit also includes a start-up control circuit configured to perform a reset operation during the reset time and generate a start-up signal based on the final enable signal, a reference voltage generation circuit configured to generate a reference voltage based on the start-up signal, a current generation circuit configured to generate a reference current based on the reference voltage, and a voltage generation circuit configured to generate an internal voltage based on the reference current.
Public/Granted literature
- US20220328090A1 INTERNAL VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS INCLUDING THE SAME Public/Granted day:2022-10-13
Information query
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