Invention Grant
- Patent Title: Inductor device
-
Application No.: US16910292Application Date: 2020-06-24
-
Publication No.: US11694835B2Publication Date: 2023-07-04
- Inventor: Hsiao-Tsung Yen , Ka-Un Chan
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Locke Lord LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW 9117888 2020.05.28
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H03H7/09 ; H01F27/29 ; H01F17/00

Abstract:
An inductor device includes a first trace, a second trace, and a double ring inductor. The first trace is disposed at a first area. The second trace is disposed at a second area. The double ring inductor is located at an outside of the first trace and the second trace. The double ring inductor is respectively coupled to the first trace and the second trace in an interlaced manner.
Public/Granted literature
- US20210012946A1 INDUCTOR DEVICE Public/Granted day:2021-01-14
Information query