Invention Grant
- Patent Title: Chemical mechanical polishing cleaning system with temperature control for defect reduction
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Application No.: US16807086Application Date: 2020-03-02
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Publication No.: US11694889B2Publication Date: 2023-07-04
- Inventor: Ssutzu Chen , Gin-Chen Huang , Ya-Ting Tsai , Ying-Tsung Chen , Kei-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B08B1/00 ; B08B3/12 ; B08B7/00 ; B08B3/08 ; B08B13/00 ; H01L21/67 ; H01L21/66
Abstract:
A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.
Public/Granted literature
- US20210272798A1 CHEMICAL MECHANICAL POLISHING CLEANING SYSTEM WITH TEMPERATURE CONTROL FOR DEFECT REDUCTION Public/Granted day:2021-09-02
Information query
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