Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
-
Application No.: US16829222Application Date: 2020-03-25
-
Publication No.: US11694890B2Publication Date: 2023-07-04
- Inventor: Kiwamu Ito , Keiko Hosoe , Yamato Tonegawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 19061653 2019.03.27
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; C23C16/455
Abstract:
A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.
Public/Granted literature
- US20200312654A1 Substrate Processing Method and Substrate Processing Apparatus Public/Granted day:2020-10-01
Information query
IPC分类:
