Invention Grant
- Patent Title: Method and use for low-temperature epitaxy and film texturing between a two-dimensional crystalline layer and metal film
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Application No.: US16775184Application Date: 2020-01-28
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Publication No.: US11694895B2Publication Date: 2023-07-04
- Inventor: Jeremy T. Robinson , Jose J. Fonseca Vega , Maxim K. Zalalutdinov
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US VA Arlington
- Assignee: The Government of the United States of America, as represented by the Secretarv of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretarv of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Stephen T. Hunnius
- Main IPC: C30B25/18
- IPC: C30B25/18 ; H01L21/02 ; B32B15/16 ; B32B9/00 ; H01L33/18 ; B32B5/18 ; B32B15/20 ; B82Y30/00
Abstract:
A method of making a crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising the steps of providing a metal film on a substrate, transferring a two-dimensional crystal layer onto the metal film and forming a two-dimensional crystal layer on metal film complex, heating the two-dimensional crystal layer on metal film complex, and forming a crystallographically-oriented metallic film with a two-dimensional crystal layer. A crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising a substrate, a metal film on the substrate, a two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the porous metal/two-dimensional crystal layer on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.
Public/Granted literature
- US20200266061A1 Crystallographically-oriented Metallic Films with Two-dimensional Crystal Layers Public/Granted day:2020-08-20
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