Invention Grant
- Patent Title: Interconnect structures and methods and apparatuses for forming the same
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Application No.: US16896591Application Date: 2020-06-09
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Publication No.: US11694899B2Publication Date: 2023-07-04
- Inventor: Chun-Hsu Yang , Chun-Sheng Chen , Nai-Hao Yang , Kuan-Chia Chen , Huei-Wen Hsieh , Yu-Cheng Hsiao , Che-Wei Tien
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01J37/34 ; H01L21/768 ; H01J37/32 ; C23C14/18 ; C23C14/34 ; H01L21/321
Abstract:
Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.
Public/Granted literature
- US20210217622A1 Interconnect Structures and Methods and Apparatuses for Forming the Same Public/Granted day:2021-07-15
Information query
IPC分类:
