Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16522602Application Date: 2019-07-25
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Publication No.: US11694938B2Publication Date: 2023-07-04
- Inventor: Mariko Ohara , Masatake Harada , Akira Goto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 18209421 2018.11.07
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/08 ; H01L23/13 ; H01L23/373 ; H01L23/00
Abstract:
A semiconductor device includes a case enclosing a region filled with a sealing material. The case is made of resin. An electrode is fixed to the case. A section, which is a part of the electrode, is provided with a cutout that allows a part of the resin making the case to be exposed to the region.
Information query
IPC分类:
