Invention Grant
- Patent Title: Integrated circuit including integrated standard cell structure
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Application No.: US17720153Application Date: 2022-04-13
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Publication No.: US11695002B2Publication Date: 2023-07-04
- Inventor: Sanghoon Baek , Myung Gil Kang , Jae-Ho Park , Seung Young Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20190111302 2019.09.09
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/092 ; H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L27/118

Abstract:
An integrated circuit includes first and second active regions, first and second standard cells on the first active region and the second active region, and a filler cell between the first and second standard cells and including first and second insulating isolations. The filler cell has a one-pitch dimension. The first and second insulating isolations are spaced the one-pitch dimension apart from each other. The first insulating isolation of the filler cell is disposed at a first boundary between the first standard cell and the filler cell. The second insulating isolation of the filler cell is disposed at a second boundary between the second standard cell and the filler cell. The first and second insulating isolations separate at least a part of the first active region, and at least a part of the second active region.
Public/Granted literature
- US20220246601A1 INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE Public/Granted day:2022-08-04
Information query
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