Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same

Invention Grant

US11695034B2 Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same 有权

Please log in to see more content

Patent Title: Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same
Application No.: US17731032

Application Date: 2022-04-27
Publication No.: US11695034B2

Publication Date: 2023-07-04
Inventor: Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Suwon-si
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Suwon-si
Agency: Muir Patent Law, PLLC
Priority: KR 20190177914 2019.12.30
Main IPC: H01L21/469
IPC: H01L21/469 ; H01L21/02 ; H01L49/02 ; H01L27/108

Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same

Abstract:

A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.

Public/Granted literature

US20220254873A1 CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-08-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理