Invention Grant
- Patent Title: Back contact structure and selective contact region buried solar cell comprising the same
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Application No.: US17541353Application Date: 2021-12-03
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Publication No.: US11695087B2Publication Date: 2023-07-04
- Inventor: Kaifu Qiu , Yongqian Wang , Xinqiang Yang , Gang Chen
- Applicant: Solarlab Aiko Europe GmbH
- Applicant Address: DE Freiburg
- Assignee: SOLARLAB AIKO EUROPE GMBH
- Current Assignee: SOLARLAB AIKO EUROPE GMBH
- Current Assignee Address: DE Freiburg
- Agency: Matthias Scholl P.C.
- Agent Matthias Scholl
- Priority: CN 2110627514.X 2021.06.04
- Main IPC: H01L31/042
- IPC: H01L31/042 ; H02S10/00 ; H02S30/00 ; H01L31/0224 ; H01L31/0236 ; H01L31/028 ; H01L31/068

Abstract:
A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.
Public/Granted literature
- US20220393044A1 BACK CONTACT STRUCTURE AND SELECTIVE CONTACT REGION BURIED SOLAR CELL COMPRISING THE SAME Public/Granted day:2022-12-08
Information query
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