Invention Grant
- Patent Title: Superlattice photodetector/light emitting diode
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Application No.: US16679549Application Date: 2019-11-11
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Publication No.: US11695093B2Publication Date: 2023-07-04
- Inventor: Shrenik Deliwala , Ryan Michael Iutzi
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: ArentFox Schiff
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/58 ; H01L33/64 ; H01L31/0352 ; H01L31/0232 ; H01L31/024
Abstract:
A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
Public/Granted literature
- US20200161502A1 SUPERLATTICE PHOTODETECTOR/LIGHT EMITTING DIODE Public/Granted day:2020-05-21
Information query
IPC分类:
