Invention Grant
- Patent Title: Light emitting diode containing a grating and methods of making the same
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Application No.: US17151862Application Date: 2021-01-19
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Publication No.: US11695100B2Publication Date: 2023-07-04
- Inventor: Zhen Chen
- Applicant: GLO AB
- Applicant Address: SE Lund
- Assignee: NANOSYS, INC.
- Current Assignee: NANOSYS, INC.
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Grpup PLLC
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L25/16 ; H01L23/00 ; H01L33/60 ; H01L33/32 ; H01L33/62 ; H01L33/42 ; H01L33/12 ; H01L33/00
Abstract:
A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.
Public/Granted literature
- US20210226107A1 LIGHT EMITTING DIODE CONTAINING A GRATING AND METHODS OF MAKING THE SAME Public/Granted day:2021-07-22
Information query
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