Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17474710Application Date: 2021-09-14
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Publication No.: US11695404B2Publication Date: 2023-07-04
- Inventor: Kentaro Arai , Toshifumi Ishimori , Yutaka Yadoumaru , Masayoshi Takahashi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JP 21049999 2021.03.24
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H01L27/02

Abstract:
According to one embodiment, a semiconductor device includes a first circuit, a first terminal, a second terminal, a conductor and a first switch element serially coupled between the first terminal and the second terminal, wherein the first circuit is configured to turn the first switch element to an OFF state when a first condition is satisfied, and the conductor is configured to physically break when a second condition is satisfied.
Public/Granted literature
- US20220311430A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-29
Information query
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