Invention Grant
- Patent Title: Wiring substrate and method of manufacturing the same
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Application No.: US17457025Application Date: 2021-11-30
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Publication No.: US11696391B2Publication Date: 2023-07-04
- Inventor: Mao-Feng Hsu , Zhi-Hong Yang
- Applicant: Avary Holding(Shenzhen)Co., Ltd. , HongQiSheng Precision Electronics(QinHuangdao)Co., Ltd. , Garuda Technology Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: AVARY HOLDING (SHENZHEN) CO., LTD.,HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) CO., LTD.,GARUDA TECHNOLOGY CO., LTD
- Current Assignee: AVARY HOLDING (SHENZHEN) CO., LTD.,HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) CO., LTD.,GARUDA TECHNOLOGY CO., LTD
- Current Assignee Address: CN Shenzhen; CN Hebei Province; TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN 2111238769.3 2021.10.25
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/03 ; H05K3/42 ; H05K3/46

Abstract:
A wiring substrate includes a first insulating layer with a first opening, a second insulating layer with a second opening, a high-frequency wiring layer, a first wiring layer, a second wiring layer, and a plurality of conductive pillars. The high-frequency wiring layer including a high-frequency trace is sandwiched between the first insulating layer and the second insulating layer. The first opening and the second opening expose two sides of the high-frequency trace respectively. The high-frequency trace has a smooth surface which is not covered by the first insulating layer and the second insulating layer and has the roughness ranging between 0.1 and 2 μm. The first insulating layer and the second insulating layer are all located between the first wiring layer and the second wiring layer. The conductive pillars are disposed in the second insulating layer and connected to the high-frequency trace.
Public/Granted literature
- US20230127697A1 WIRING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-04-27
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