Invention Grant
- Patent Title: Low LOI tellurium-lithium-silicon-zirconium frit system and conductive paste and application thereof
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Application No.: US17680878Application Date: 2022-02-25
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Publication No.: US11697612B2Publication Date: 2023-07-11
- Inventor: Li Yan , Song Xu , Rui Tian
- Applicant: Jiangsu Riyu Photovoltaic New Material Technology Co. Ltd
- Applicant Address: CN Wuxi
- Assignee: JIANGSU RIYU PHOTOVOLTAIC NEW MATERIAL TECHNOLOGY CO. LTD
- Current Assignee: JIANGSU RIYU PHOTOVOLTAIC NEW MATERIAL TECHNOLOGY CO. LTD
- Current Assignee Address: CN Wuxi
- Agency: IPRO, PLLC
- Priority: CN 2210009639.0 2022.01.06
- Main IPC: C03C8/12
- IPC: C03C8/12 ; C03C8/10 ; C03C3/062 ; H01L31/0216 ; C03C3/07 ; C03C3/12

Abstract:
The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO2, 18%-24% Li2O, 4%-13% SiO2, 0-2% ZrO2, and a balance MOx, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.
Public/Granted literature
- US20220177356A1 Low LOI Tellurium-Lithium-Silicon-Zirconium Frit System and Conductive Paste and Application Thereof Public/Granted day:2022-06-09
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