A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.