A method 14 for the controlled removal of a protective layer 3 from a surface of a component 10, wherein the component comprises:



a base body 1;
an intermediate layer 2, which at least partially covers the base body; and
said protective layer 3, which comprises an amorphous solid, in particular an amorphous nonmetal, in particular amorphous ceramic, and at least partially covers the intermediate layer;

wherein the method comprises the following steps:

bringing 11 the protective layer 3 into contact with an etching or solvent medium 4; and
removing 12 the protective layer 3 under the action of the etching or solvent medium 4 until the intermediate layer 2 is exposed;

and wherein the etching or solvent medium causes a first etching or dissolving speed of the protective layer and a second etching or dissolving speed of the intermediate layer and wherein the first etching or dissolving speed is greater than the second etching or dissolving speed. The invention furthermore relates to a method for replacing an old protective layer on a component, a method for operating a thin-film process facility, a component for use in a thin-film process facility, and a production method for the component.