Invention Grant
- Patent Title: Silicon nitride etching composition and method
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Application No.: US17341138Application Date: 2021-06-07
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Publication No.: US11697767B2Publication Date: 2023-07-11
- Inventor: Steven Michael Bilodeau , SeongJin Hong , Hsing-Chen Wu , Min-Chieh Yang , Emanuel I. Cooper
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Main IPC: C09K13/06
- IPC: C09K13/06 ; H01L21/311 ; C09K13/04 ; C09K13/00 ; H01L21/3213 ; C09K13/08 ; H01L21/306 ; C23F1/14
Abstract:
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Public/Granted literature
- US20210296136A1 SILICON NITRIDE ETCHING COMPOSITION AND METHOD Public/Granted day:2021-09-23
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