Invention Grant
- Patent Title: Memory, memory controlling method and system
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Application No.: US17703228Application Date: 2022-03-24
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Publication No.: US11698793B2Publication Date: 2023-07-11
- Inventor: Junjing Zhang , Huachun Zhang , Ruijie Bai
- Applicant: GIGADEVICE SEMICONDUCTOR (XIAN) INC.
- Applicant Address: CN Xi'an
- Assignee: GIGADEVICE SEMICONDUCTOR (XIAN) INC.
- Current Assignee: GIGADEVICE SEMICONDUCTOR (XIAN) INC.
- Current Assignee Address: CN Xi'an
- Agency: IPro, PLLC
- Priority: CN 2111075729.1 2021.09.14
- Main IPC: G06F1/32
- IPC: G06F1/32 ; G06F9/44 ; G06F9/4401 ; G06F1/3287

Abstract:
A memory, a method controlling method and a system are disclosed. The memory includes: an array of memory cells; a power manager; an instruction decoder; a controller; and an I/O interface, including a chip select pin. In the standby state, the instruction decoder and controller are enabled; in the power-down state, the instruction decoder is enabled; and in the deep power-down state, they are all disabled. In response to receiving a chip select signal, the memory enters the power-down state from the deep power-down state. The memory of the present disclosure provides the deep power-down state that disables the decoder, and the memory in the deep power-down state exits directly to the power-down state to achieve some functions without enabling all components, thereby reducing power consumption.
Public/Granted literature
- US20230079428A1 MEMORY, MEMORY CONTROLLING METHOD AND SYSTEM Public/Granted day:2023-03-16
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