Invention Grant
- Patent Title: Qubit circuits with deep, in-substrate components
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Application No.: US17140741Application Date: 2021-01-04
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Publication No.: US11699091B2Publication Date: 2023-07-11
- Inventor: Wayne Woods , Danna Rosenberg , Cyrus Hirjibehedin , Donna-Ruth Yost , Justin Mallek , Andrew Kerman , Mollie Schwartz , Jonilyn Yoder , William Oliver , Thomas Hazard
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Smith Baluch LLP
- Main IPC: G06N10/00
- IPC: G06N10/00 ; H10N60/82 ; H10N60/81 ; B82Y10/00 ; B82Y40/00

Abstract:
Qubit circuits having components formed deep in a substrate are described. The qubit circuits can be manufactured using existing integrated-circuit technologies. By forming components such as superconducting current loops, inductive, and/or capacitive components deep in the substrate, the footprint of the qubit circuit integrated within the substrate can be reduced. Additionally, coupling efficiency to and from the qubit can be improved and losses in the qubit circuit may be reduced.
Public/Granted literature
- US20220121978A1 QUBIT CIRCUITS WITH DEEP, IN-SUBSTRATE COMPONENTS Public/Granted day:2022-04-21
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