Invention Grant
- Patent Title: Method of verifying error of optical proximity correction model
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Application No.: US17384366Application Date: 2021-07-23
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Publication No.: US11699227B2Publication Date: 2023-07-11
- Inventor: Heungsuk Oh , Mincheol Kang , Sangwook Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200169480 2020.12.07
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G06T7/50 ; G06T7/60 ; G03F1/36 ; G06V10/30 ; G06V10/42 ; G06V10/88 ; G06F18/22 ; G06F18/214

Abstract:
A method of fabricating a semiconductor device includes generating a mask based on second layout data obtained by applying an OPC model to first layout data and performing a semiconductor process using the mask on a substrate, obtaining a plurality of pattern images by selecting a plurality of sample patterns from the substrate, selecting sample images corresponding to the sample patterns from each of the first layout data, the second layout data, and simulation data obtained by performing a simulation based on the second layout data, generating a plurality of input images corresponding to the sample patterns by blending the sample images corresponding to the sample patterns, respectively, and generating an error prediction model for the OPC model by training a machine learning model using a data set including the input images and the pattern images.
Public/Granted literature
- US20220180503A1 METHOD OF VERIFYING ERROR OF OPTICAL PROXIMITY CORRECTION MODEL Public/Granted day:2022-06-09
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