Invention Grant
- Patent Title: String dependent SLC reliability compensation in non-volatile memory structures
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Application No.: US17349118Application Date: 2021-06-16
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Publication No.: US11699495B2Publication Date: 2023-07-11
- Inventor: Xiang Yang
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Dickinson Wright PLLC
- Agent Steven C. Hurles
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C16/34 ; G11C16/26 ; G11C16/14 ; G11C16/10

Abstract:
A method for programming a memory block of a non-volatile memory structure, comprising determining whether a number of programming/erase cycles previously applied to the block exceeds a first programming/erase cycle threshold and, if the first threshold is exceeded, determining whether the number of programming/erase cycles previously applied to the block exceeds an extended programming/erase cycle threshold. Further, if the determination is made that the extended threshold is not exceeded, the method comprises applying a two-pulse per programming loop scheme to each of the outermost strings of the block and applying a single-pulse per programming loop scheme to all other strings of the block. Alternatively, or in addition thereto, relative to a programming/erase cycle threshold, one or more outermost strings of the block may be unpermitted to be further programmed, and a “sub-block” comprised of all valid strings of the block may be defined and permitted for further programming.
Public/Granted literature
- US20220406389A1 STRING DEPENDENT SLC RELIABILITY COMPENSATION IN NON-VOLATILE MEMORY STRUCTURES Public/Granted day:2022-12-22
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