Invention Grant
- Patent Title: Power semiconductor module arrangement
-
Application No.: US17872436Application Date: 2022-07-25
-
Publication No.: US11699625B2Publication Date: 2023-07-11
- Inventor: Alexander Hoehn
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP 172724 2019.05.06
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/057 ; H01L21/48 ; H01L25/07 ; H01L25/00

Abstract:
A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.
Public/Granted literature
- US20220359319A1 POWER SEMICONDUCTOR MODULE ARRANGEMENT Public/Granted day:2022-11-10
Information query
IPC分类: