Invention Grant
- Patent Title: Semiconductor apparatus and equipment
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Application No.: US16942944Application Date: 2020-07-30
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Publication No.: US11699653B2Publication Date: 2023-07-11
- Inventor: Yuichi Kazue
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Venable LLP
- Priority: JP 19146826 2019.08.08
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/146

Abstract:
A semiconductor apparatus comprising a first substrate, a second substrate coupled with the first substrate via an insulating member, a third substrate coupled to the first substrate and disposed on the opposite side to the second substrate and a conductive layer including an electrode disposed between the first and second substrate is provided. A through via is disposed so as to pass through the second substrate and a part of the insulating member to reach the electrode. An opening is arranged overlapping the electrode in the first substrate and a part of the insulating member. First and second resin layers are disposed between the electrode and the third substrate, and the first resin layer is disposed within the opening, is disposed between the electrode and the second resin layer and has a different Young's modulus from the second resin layer.
Public/Granted literature
- US20210043562A1 SEMICONDUCTOR APPARATUS AND EQUIPMENT Public/Granted day:2021-02-11
Information query
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