Invention Grant
- Patent Title: Integrated circuit device including metal-oxide semiconductor transistors
-
Application No.: US17199720Application Date: 2021-03-12
-
Publication No.: US11699700B2Publication Date: 2023-07-11
- Inventor: Jinhyeok Song , Mingeun Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20200114870 2020.09.08
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L23/544 ; H01L23/66

Abstract:
An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.
Public/Granted literature
- US20220077143A1 INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS Public/Granted day:2022-03-10
Information query
IPC分类: