Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17984797Application Date: 2022-11-10
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Publication No.: US11699724B2Publication Date: 2023-07-11
- Inventor: Jumpei Tajima , Toshiki Hikosaka , Shinya Nunoue
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20068619 2020.04.06
- The original application number of the division: US17141269 2021.01.05
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/36
Abstract:
According to one embodiment, a semiconductor device includes a first crystal region, a second crystal region, a third crystal region, and a fourth crystal region. The first crystal region includes magnesium and Alx1Ga1-x1N (0≤x1
Public/Granted literature
- US20230071966A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-03-09
Information query
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