Invention Grant
- Patent Title: Electroless plating method for metal gate fill
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Application No.: US17190267Application Date: 2021-03-02
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Publication No.: US11699740B2Publication Date: 2023-07-11
- Inventor: Hsin-Yi Lee , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L29/06 ; H01L29/423 ; H01L21/8238 ; C23C18/16

Abstract:
Embodiments utilize an electro-chemical process to deposit a metal gate electrode in a gate opening in a gate replacement process for a nanosheet FinFET device. Accelerators and suppressors may be used to achieve a bottom-up deposition for a fill material of the metal gate electrode.
Public/Granted literature
- US20220093770A1 ELECTROLESS PLATING METHOD FOR METAL GATE FILL Public/Granted day:2022-03-24
Information query
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