Invention Grant
- Patent Title: Isolation structure having different distances to adjacent FinFET devices
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Application No.: US17341075Application Date: 2021-06-07
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Publication No.: US11699758B2Publication Date: 2023-07-11
- Inventor: Chang-Yun Chang , Ming-Ching Chang , Shu-Yuan Ku
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L21/8238 ; H01L29/66 ; H01L27/092 ; H01L21/306 ; H01L29/06 ; H01L21/8234
Abstract:
A first FinFET device includes first fin structures that extend in a first direction in a top view. A second FinFET device includes second fin structures that extend in the first direction in the top view. The first FinFET device and the second FinFET device are different types of FinFET devices. A plurality of gate structures extend in a second direction in the top view. The second direction is different from the first direction. Each of the gate structures partially wraps around the first fin structures and the second fin structures. A dielectric structure is disposed between the first FinFET device and the second FinFET device. The dielectric structure cuts each of the gate structures into a first segment for the first FinFET device and a second segment for the second FinFET device. The dielectric structure is located closer to the first FinFET device than to the second FinFET device.
Public/Granted literature
- US20210296484A1 Isolation Structure Having Different Distances to Adjacent FinFET Devices Public/Granted day:2021-09-23
Information query
IPC分类:
