Invention Grant
- Patent Title: Semiconductor LED and method of manufacturing the same
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Application No.: US17138071Application Date: 2020-12-30
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Publication No.: US11699775B2Publication Date: 2023-07-11
- Inventor: Junhee Choi , Nakhyun Kim , Jinjoo Park , Joohun Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO.. LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO.. LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200008760 2020.01.22 KR 20200073732 2020.06.17
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L25/075 ; H01L33/32 ; H01L33/00

Abstract:
A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.
Public/Granted literature
- US20210226092A1 SEMICONDUCTOR LED AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-07-22
Information query
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