Invention Grant
- Patent Title: Memory device with air gaps for reducing capacitive coupling
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Application No.: US17828264Application Date: 2022-05-31
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Publication No.: US11700720B2Publication Date: 2023-07-11
- Inventor: Te-Yin Chen
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- The original application number of the division: US16912255 2020.06.25
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H10B12/00 ; H01L21/768

Abstract:
The present application provides a memory device with an air gap. The memory device includes an active region disposed in a substrate; a word line disposed in the substrate, wherein the word line is intersected with the active region; a contact structure disposed on the substrate, wherein the contact structure is located at a side of the word line, and electrically connected to the active region; a first conductive layer and a second conductive layer disposed over the substrate, wherein the contact structure is covered by the first and second conductive layers; a conductive pillar overlapped with and electrically connected to the contact structure; a landing pad covers and electrically connects to the conductive pillar, wherein a sidewall of the conductive pillar is laterally recessed from a sidewall of the landing pad; and a dielectric layer laterally surrounding the conductive pillar and the landing pad.
Public/Granted literature
- US20220293607A1 MEMORY DEVICE WITH AIR GAPS FOR REDUCING CAPACITIVE COUPLING Public/Granted day:2022-09-15
Information query
IPC分类: