Invention Grant
- Patent Title: Doped emissive layer for patterned QDS light emitting diodes (QLEDS) with balanced transport of charges
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Application No.: US17097437Application Date: 2020-11-13
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Publication No.: US11700736B2Publication Date: 2023-07-11
- Inventor: Enrico Angioni
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: ScienBiziP, P.C.
- Main IPC: H10K50/115
- IPC: H10K50/115 ; H10K50/15 ; H10K50/16 ; H10K50/11 ; H10K50/17 ; H10K101/40

Abstract:
A light-emitting device includes a substrate, an anode, a cathode, an emissive layer between the anode and the cathode, the emissive layer comprising quantum dots having ligands, a cross-linked matrix comprising a cross-linkable charge transport material other than the ligands, and another charge transport material, where the quantum dots are dispersed in the cross-linked matrix, and the another charge transport material alters mobility of charge carriers of the emissive layer. The another charge transport material is not cross-linked with the cross-linked charge transport material in the cross-linked matrix. The cross-linked charge transport material is a cross-linkable hole transporting material. The another charge transporting material includes a hole transporting material. The hole transporting material has a highest occupied molecular orbital or valence energy level between those of the cross-linked hole transporting material and the quantum dots.
Public/Granted literature
- US20220158106A1 DOPED EMISSIVE LAYER FOR PATTERNED QDS LIGHT EMITTING DIODES (QLEDS) WITH BALANCED TRANSPORT OF CHARGES Public/Granted day:2022-05-19
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