Invention Grant
- Patent Title: Semiconductor with coaxial P-type and N-type material
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Application No.: US18065529Application Date: 2022-12-13
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Publication No.: US11700770B1Publication Date: 2023-07-11
- Inventor: Pawel Czubarow , Anthony Czubarow , Philip Premysler
- Applicant: Pawel Czubarow , Anthony Czubarow , Philip Premysler
- Applicant Address: US MA Wellesley
- Assignee: em-TECH
- Current Assignee: em-TECH
- Current Assignee Address: US MA Framingham
- The original application number of the division: US16995582 2020.08.17
- Main IPC: H10N10/17
- IPC: H10N10/17 ; H10N10/13 ; H10N10/10 ; B64D41/00 ; H10N10/854

Abstract:
Disclosed is a thermoelectric generator including a heat source contact, a heat sink contact, and a plurality of co-axial fibers. Each of the co-axial fibers include a core and a cladding disposed about the core. The plurality of co-axial fibers extend from the heat source contact to the heat sink contact. Thermoelectric generators are disclosed including hollow core doped silicon carbide fibers and doubly clad PIN junction fibers. Methods for forming direct PN junctions between oppositely doped fibers are additionally disclosed.
Public/Granted literature
- US20230200239A1 SEMICONDUCTOR WITH COAXIAL P-TYPE AND N-TYPE MATERIAL Public/Granted day:2023-06-22
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